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MT29E1T208ECHBBJ4-3ES:B TR

MT29E1T208ECHBBJ4-3ES:B TR

IC FLASH 1.125T PARALLEL 132VBGA

MT29E1T208ECHBBJ4-3ES:B TR

MT29E1T208ECHBBJ4-3ES:B TR

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Part No :

MT29E1T208ECHBBJ4-3ES:B TR

Manufacturer
Micron Technology
Description
IC FLASH 1.125T PARALLEL 132VBGA
Catalog
Memory
Availability
423642 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 28 - Dec 02 2024
Type Description
Series:-
Package:Tape & Reel (TR)
Part Status:Active
Memory Type:Non-Volatile
Memory Format:FLASH
Technology:FLASH - NAND
Memory Size:1.125Tb (144G x 8)
Memory Interface:Parallel
Clock Frequency:-
Write Cycle Time - Word, Page:-
Access Time:-
Voltage - Supply:2.5V ~ 3.6V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:132-VBGA
Supplier Device Package:132-VBGA (12x18)
MT29E1T208ECHBBJ4-3ES:B TR is available at GangBo-ic.com, Please review product page below for detailed information, including MT29E1T208ECHBBJ4-3ES:B TR price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for MT29E1T208ECHBBJ4-3ES:B TR to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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