IC NVSRAM 4MBIT PARALLEL 32EDIP
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | NVSRAM |
Technology: | NVSRAM (Non-Volatile SRAM) |
Memory Size: | 4Mb (512K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 100ns |
Access Time: | 100 ns |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 32-DIP Module (0.600", 15.24mm) |
Supplier Device Package: | 32-EDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AT93C56-10PIRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
MT29C4G96MAZBBCJG-48 ITMicron Technology |
IC FLASH RAM 4GBIT PAR 168WFBGA |
|
MT48LC8M16A2P-75:GMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
AT27C512R-90PIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
AT27BV512-70JURoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MT29F64G08AEAAAC5-Z:AMicron Technology |
IC FLASH 64GBIT PARALLEL 52VLGA |
|
71421LA25PF8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
W632GG6MB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
IDT71V256SA20YRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
M25P40-VMN3PBMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8SO |
|
709289L7PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT48LC8M16A2P-6A IT:GMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT29F128G08CKCCBH2-12Z:CMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |