IC EEPROM 2KBIT I2C 1MHZ 8DIP
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 2Kb (256 x 8) |
Memory Interface: | I²C |
Clock Frequency: | 1 MHz |
Write Cycle Time - Word, Page: | 5ms |
Access Time: | 550 ns |
Voltage - Supply: | 1.8V ~ 5.5V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 8-DIP (0.300", 7.62mm) |
Supplier Device Package: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
W25Q128FVSIQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
MX25L12835EMI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 16SOP |
|
AT28C16E-15PCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24DIP |
|
AT24C04N-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8SOIC |
|
SST25VF080B-80-4C-SAERoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 80MHZ 8SOIC |
|
MT47H128M8B7-5E:AMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
70V9279S7PRFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
MT46V16M16P-5B AIT:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS25WD040-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 80MHZ 8SOIC |
|
W25Q256FVEIFWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
IDT71V124SA20YG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IDT71V424L10YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
AT49F001-90PIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |