IC DRAM 2GBIT PARALLEL 96TWBGA
Type | Description |
---|---|
Series: | Automotive, AEC-Q100 |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3 |
Memory Size: | 2Gb (128M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 800 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 20 ns |
Voltage - Supply: | 1.425V ~ 1.575V |
Operating Temperature: | -40°C ~ 115°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 96-TFBGA |
Supplier Device Package: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS66WV51216EBLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PARALLEL 48TFBGA |
|
MT47H64M8B6-5E:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
N25Q128A13ESEC0EMicron Technology |
IC FLSH 128MBIT SPI 108MHZ 8SOP2 |
|
PC28F640P30B85D TRMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
MT29F64G08CECCBH1-12IT:CMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
S29JL032J60TFI313Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
STK11C68-C35Cypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28CDIP |
|
W25Q16CVSSJGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
NM27C256QE200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256KBIT PARALLEL 28CDIP |
|
7008L55JRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
7007S15PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
MTFC32GJDED-3M WTMicron Technology |
IC FLASH 256GBIT MMC 169VFBGA |
|
AT25040B-MAPD-ERoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 5MHZ 8UDFN |