TVS DIODE 120V 192.3V P600
IC EPROM 256KBIT PARALLEL 28SOIC
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - OTP |
Memory Size: | 256Kb (32K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | - |
Access Time: | 120 ns |
Voltage - Supply: | 3V ~ 3.6V, 4.5V ~ 5.5V |
Operating Temperature: | 0°C ~ 70°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 28-SOIC (0.342", 8.69mm Width) |
Supplier Device Package: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AT25HP512-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 512KBIT SPI 10MHZ 8DIP |
|
AT29C256-70JI-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 32PLCC |
|
AS4C32M16D1-5TINAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 66TSOP II |
|
W25Q80BWSSIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 80MHZ 8SOIC |
|
IS64WV6416BLL-15BA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
MT46V16M16P-5B XIT:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
MT47H128M16RT-3:CMicron Technology |
IC DRAM 2GBIT PARALLEL 84FBGA |
|
IDT71V546S100PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IDT71P71604S200BQGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS61WV102416BLL-10MIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
EDB1332BDBH-1DIT-F-DMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
S29AL016J55TFIR10ACypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
W25Q32FVSSJQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |