IC DRAM 1GBIT PARALLEL 84FBGA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 1Gb (64M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400 ps |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 84-TFBGA |
Supplier Device Package: | 84-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
![]() |
AT25010A-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8TSSOP |
![]() |
IS42S16100C1-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
![]() |
MT46V64M8P-75 L:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
![]() |
IS42S16400F-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
![]() |
IS43LD16640A-25BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
![]() |
DS28E10R-W15+1TMaxim Integrated |
IC EPROM 224B 1-WIRE SOT23-3 |
![]() |
MT29F64G08AFAAAWP-Z:A TRMicron Technology |
IC FLSH 64GBIT PARALLEL 48TSOP I |
![]() |
N25Q128A11EF840EMicron Technology |
IC FLASH 128MBIT SPI 8VDFPN |
![]() |
IS42S32200C1-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
![]() |
MT46V32M16P-5B IT:JMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
![]() |
MT47H32M16HR-25E IT:GMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
![]() |
S25FL116K0XMFV010Cypress Semiconductor |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
![]() |
MT29C1G12MAACAEAMD-6 IT TRMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |