IC FLASH 512MBIT PARALLEL 64FBGA
Type | Description |
---|---|
Series: | GL-P |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 120ns |
Access Time: | 120 ns |
Voltage - Supply: | 1.65V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY7C1062DV33-10BGICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 119PBGA |
|
IS42S32800D-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
93C76A-E/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
CY7C025-25JXCCypress Semiconductor |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
IDT71V632S7PFI8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
MT29F32G08ABAAAWP-IT:A TRMicron Technology |
IC FLSH 32GBIT PARALLEL 48TSOP I |
|
MT46V32M8FG-75E:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
MT29F128G08AMCABH2-10Z:A TRMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
AT93C56W-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
70V26S35JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
W25Q64JWZEIMWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
IS43DR16160A-3DBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
AT24C02-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |