IC DRAM 256MBIT PARALLEL 54TFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 256Mb (16M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 143 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 5.4 ns |
Voltage - Supply: | 3V ~ 3.6V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TFBGA |
Supplier Device Package: | 54-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS61LPS25636A-200TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT28C256-90JIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
AT25256T2-10TCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 20TSSOP |
|
S34ML04G200BHA000SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |
|
AT29C020-90JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
M25PE40-VMC6GMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8MLP |
|
FT24C08A-UMR-BFremont Micro Devices |
IC EEPROM 8KBIT I2C 1MHZ 8MSOP |
|
AT24C16N-10SI-2.5Roving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
S25FL129P0XNFV000Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
W632GG8NB11JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
MT47H128M4CB-3:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT46V16M16P-6T:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
AT25160B-XHLHX-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |