IC DRAM 512MBIT PARALLEL 66TSOP
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (128M x 4) |
Memory Interface: | Parallel |
Clock Frequency: | 200 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.5V ~ 2.7V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AT28HC256F-12SARoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
AS4C128M8D3A-12BANTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
IS61WV5128BLS-25TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
70V659S10DRRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
IS46TR16128B-15HBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
AT45DB321D-CU-SL383Adesto Technologies |
IC FLASH 32MBIT SPI 66MHZ 24CBGA |
|
AT24C04-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 8TSSOP |
|
IS42VS16100C1-10TIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT45DQ321-MHD-YAdesto Technologies |
IC FLASH 32MBIT SPI 104MHZ 8UDFN |
|
M24M01-RMW6TGSTMicroelectronics |
IC EEPROM 1MBIT I2C 1MHZ 8SO |
|
MT40A512M16JY-062E:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
MT41K128M16JT-125 M:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT29LV256-15TI-TRoving Networks / Microchip Technology |
IC FLASH 256KBIT PARALLEL 28TSOP |