IC SRAM 512KBIT PARALLEL 100TQFP
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 512Kb (32K x 16) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25 ns |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
70V657S12DRIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208PQFP |
|
CY7C1361C-100BGCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
MT53D384M32D2DS-046 WT ES:EMicron Technology |
IC DRAM 12GBIT 2133MHZ 200WFBGA |
|
IDT71V416YL10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IDT71V65603S100PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
M24C08-RDS6GSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
IS42S32200C1-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
N25Q064A13ESEC0GMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO W |
|
MT28EW256ABA1HPC-1SITMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
MT29F4G08ABAEAWP:EMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
DS1250ABP-70Maxim Integrated |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
IS46DR81280C-3DBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
IDT71P74604S200BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |