IC DRAM 512MBIT PARALLEL 84FBGA
Type | Description |
---|---|
Series: | Automotive, AEC-Q100 |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400 ps |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 84-TFBGA |
Supplier Device Package: | 84-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS61WV102416DALL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
MT46V64M8FN-75:DMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IS29GL512S-11DHB013Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
MT29F128G08CEEDBJ4-12IT:D TRMicron Technology |
IC FLASH 128GBIT PAR 132VBGA |
|
M25P16-VMW6TG TRMicron Technology |
IC FLASH 16MBIT SPI 75MHZ 8SO W |
|
W25Q32FVZPIQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
MT48LC4M16A2P-7E:G TRMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
24FC04-E/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ 8TSSOP |
|
N25Q064A13E12H0F TRMicron Technology |
IC FLASH 64MBIT SPI 24TPBGA |
|
71V35761SA200BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IDT71T75902S85BGGIRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
IS61LF102418A-6.5TQL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS41C16256C-35TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4MBIT PARALLEL 40TSOP |