IC SRAM 512KBIT PARALLEL 100TQFP
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 512Kb (32K x 16) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55 ns |
Voltage - Supply: | 3V ~ 3.6V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MT48V8M16LFB4-8 XT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
IDT71V3558S133PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29F16G08ABCCBH1-10Z:C TRMicron Technology |
IC FLASH 16GBIT PARALLEL 100VBGA |
|
AT93C46C-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
AT49BV160D-70TURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
70V09L15PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT48H8M32LFF5-10 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
IS43DR16160A-3DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
X28HC256JIZ-90T1Intersil (Renesas Electronics America) |
IC EEPROM 256KBIT PAR 32PLCC |
|
MT47H32M16HW-25E:GMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
MT29F1G16ABBEAMD-IT:EMicron Technology |
IC FLASH 1GBIT PARALLEL 130VFBGA |
|
IDT71V3556S166BQGRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS42VM16800G-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |