IC DRAM 12GBIT 1600MHZ 200WFBGA
Type | Description |
---|---|
Series: | Automotive, AEC-Q100 |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR4 |
Memory Size: | 12Gb (384M x 32) |
Memory Interface: | - |
Clock Frequency: | 1.6 GHz |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | 1.1V |
Operating Temperature: | -40°C ~ 105°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 200-WFBGA |
Supplier Device Package: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS25LD040-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 100MHZ 8SOIC |
|
MT28F640J3RG-115 XMET TRMicron Technology |
IC FLSH 64MBIT PARALLEL 56TSOP I |
|
S29PL127J60TAW130Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
AT27C4096-15JCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
MT53B128M32D1NP-062 AIT:AMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
|
IDT71V25761YSA200BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S16100E-6TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71256TTSA25Y8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
71V432S5PFGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
IDT71124S12YGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
M29DW256G70NF3EMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
PC28F512P33EF0Micron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
M27C2001-15F1STMicroelectronics |
IC EPROM 2MBIT PARALLEL 32CDIP |