IC EEPROM 4KBIT 1-WIRE 6TDFN
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 4Kb (256 x 16) |
Memory Interface: | 1-Wire® |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | - |
Access Time: | 2 µs |
Voltage - Supply: | 2.8V ~ 5.25V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 6-WDFN Exposed Pad |
Supplier Device Package: | 6-TDFN-EP (3x3) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
AT45DB161B-RI-2.5Roving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 15MHZ 28SOIC |
|
70V7599S133DRRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
70V3589S133DRIRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208PQFP |
|
7016L25PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 80TQFP |
|
SST39WF800A-90-4C-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
NMC27C32BQ200Sanyo Semiconductor/ON Semiconductor |
IC EPROM 32KBIT PARALLEL 24DIP |
|
AT34C02-10TU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
DS1220AB-200INDMaxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
MT47H32M8BP-37E:B TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
IS61NLP102418-250B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
M25PE80-VMW6GMicron Technology |
IC FLASH 8MBIT SPI 75MHZ 8SO W |
|
IS61LF102418A-6.5B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
7008S15PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |