IC DRAM 2GBIT PARALLEL 96TWBGA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR3 |
Memory Size: | 2Gb (128M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 933 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 195 ps |
Voltage - Supply: | 1.425V ~ 1.575V |
Operating Temperature: | 0°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 96-TFBGA |
Supplier Device Package: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS46TR16256AL-15HBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
AT24C02-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
W29N01GZDIBAWinbond Electronics Corporation |
IC FLASH 1GBIT PARALLEL 48VFBGA |
|
AT27C512R-70JCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
W25Q32FVSSIQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
W25X80VDAIZWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 75MHZ 8DIP |
|
24LC64-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
PC28F512M29EWH3Micron Technology |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
MT29F1G16ABCHC:CMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
W25Q16BVSSIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
MT46H8M16LFBF-5:K TRMicron Technology |
IC DRAM 128MBIT PARALLEL 60VFBGA |
|
IDT71V35761S166PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M93C46-MN6TSTMicroelectronics |
IC EEPROM 1KBIT SPI 2MHZ 8SO |