IC DRAM 512MBIT PARALLEL 60FBGA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 167 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.3V ~ 2.7V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-FBGA (10x12.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IDT71V416VS10PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IDT71V424S12PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IS43QR16256A-093PBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
PC28F640P33B85B TRMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
MT46V128M4FN-75:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
S25FL164K0XBHI033Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
IS61VPD102418A-200B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
AS4C512M8D3B-12BCNTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
CAT25C256LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT SPI 5MHZ 8DIP |
|
AT49BV001NT-12TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT24C16N-10SCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8SOIC |
|
S34MS01G200BHB003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL |
|
S-24CS08ADP-1GABLIC U.S.A. Inc. |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |