IC FLASH 512MBIT PARALLEL 64FBGA
HVFO103 +/-40V (40X ATTENUATION)
Type | Description |
---|---|
Series: | GL-P |
Package: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 120ns |
Access Time: | 120 ns |
Voltage - Supply: | 1.65V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-LBGA |
Supplier Device Package: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
RC28F256P30T85B TRMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
DS2502X1+UMaxim Integrated |
IC EPROM 1KBIT 1-WIRE 4WLP |
|
AT26DF161A-SURoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI 70MHZ 8SOIC |
|
70V05S25PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
IDT71V2548S133PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY62137CV30LL-70BVXETCypress Semiconductor |
IC SRAM 2MBIT PARALLEL 48VFBGA |
|
MT47H128M8JN-3 IT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
70V7519S133DRIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208PQFP |
|
AT24C128-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8DIP |
|
IS43LD16640A-3BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
MT46V64M8TG-75Z:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
MT41J128M16HA-187E:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
JS48F4400P0TB00AMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |