IC DRAM 128MBIT PAR 66TSOP II
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 128Mb (8M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 200 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.3V ~ 2.7V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 66-TSOP II |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CAT24WC66LIRochester Electronics |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
BR24S16F-WE2ROHM Semiconductor |
IC EEPROM 16KBIT I2C 400KHZ 8SOP |
|
CY7C4122KV13-933FCXCRochester Electronics |
QDR SRAM, 8MX18 PBGA361 |
|
MT58L512L18FS-10ITRochester Electronics |
CACHE SRAM 512KX18 10NS PQFP100 |
|
AT25320A-10TQ-2.7Rochester Electronics |
EEPROM, 4KX8, SERIAL, CMOS |
|
CY62128VLL-55ZITRochester Electronics |
SRAM 1M-BIT 128K X 8 55NS |
|
S25FS512SDSMFV013Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
S29GL032N90BAI030Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 48FBGA |
|
GS8673ET18BGK-675IGSI Technology |
IC SRAM 72MBIT PARALLEL 260BGA |
|
25LC080AT-H/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
DS1330WP-150+Rochester Electronics |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
S29GL01GS10DHSS23Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
70V3579S5BC8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |