IC FLASH 128MBIT PARALLEL 24FBGA
Type | Description |
---|---|
Series: | HyperFlash™ KS |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 128Mb (16M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 166 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 96 ns |
Voltage - Supply: | 1.7V ~ 1.95V |
Operating Temperature: | -40°C ~ 105°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 24-VBGA |
Supplier Device Package: | 24-FBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY7C1614KV18-250BZIRochester Electronics |
QDR SRAM, 4MX36, 0.45NS PBGA165 |
|
FM24C64EM8Rochester Electronics |
IC EEPROM 64KBIT I2C 8SOIC |
|
IS45S16160J-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT45DB041E-SSHN-TAdesto Technologies |
IC FLASH 4MBIT SPI 85MHZ 8SOIC |
|
S25FS256SDSBHI203Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
24AA02E64-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IS42S16400J-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
CY7C2170KV18-550BZXCRochester Electronics |
DDR SRAM, 512KX36, 0.45NS PBGA16 |
|
MT58L512Y36FT-6.8Rochester Electronics |
CACHE SRAM, 512KX36, 6.8NS PQFP1 |
|
CY7C199-15VCRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
GD25Q64CFIGRGigaDevice |
IC FLASH 64MBIT SPI/QUAD 16SOP |
|
93C46B-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
|
AS7C31025B-12TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |