STANDARD SRAM, 2KX8, 25NS, CMOS
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 16Kb (2K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 25ns |
Access Time: | 25 ns |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | - |
Package / Case: | - |
Supplier Device Package: | - |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MT53E256M32D2DS-053 AAT:B TRMicron Technology |
IC DRAM 8GBIT 1.866GHZ 200WFBGA |
|
GD25VQ16CEIGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
IS42RM32800K-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
SST39VF1602C-70-4I-B3KERoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TFBGA |
|
IS42S32200L-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
71V3579S80PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
SST39VF040-70-4C-WHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
W9825G6JB-6Winbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY7C1480BV33-167BZXCRochester Electronics |
CACHE SRAM, 2MX36, 3.4NS PBGA165 |
|
71016S15YGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
GS8662Q37BGD-357IGSI Technology |
IC SRAM 72MBIT PARALLEL 165FPBGA |
|
25LC080D-I/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8DIP |
|
S34ML04G100TFV000Flip Electronics |
IC FLASH 4GBIT PARALLEL 48TSOP I |