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TH58BYG2S3HBAI6

TH58BYG2S3HBAI6

IC FLASH 4GBIT PARALLEL 67VFBGA

TH58BYG2S3HBAI6

TH58BYG2S3HBAI6

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Part No :

TH58BYG2S3HBAI6

Manufacturer
Toshiba Memory America, Inc. (Kioxia America, Inc.)
Description
IC FLASH 4GBIT PARALLEL 67VFBGA
Catalog
Memory
Availability
10338 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 23 - Nov 27 2024
Type Description
Series:Benand™
Package:Tray
Part Status:Active
Memory Type:Non-Volatile
Memory Format:FLASH
Technology:FLASH - NAND (SLC)
Memory Size:4Gb (512M x 8)
Memory Interface:Parallel
Clock Frequency:-
Write Cycle Time - Word, Page:25ns
Access Time:25 ns
Voltage - Supply:1.7V ~ 1.95V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:67-VFBGA
Supplier Device Package:67-VFBGA (6.5x8)
TH58BYG2S3HBAI6 is available at GangBo-ic.com, Please review product page below for detailed information, including TH58BYG2S3HBAI6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TH58BYG2S3HBAI6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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