







MEMS OSC XO 4.0000MHZ H/LV-CMOS
IC SRAM 4MBIT PARALLEL 44TSOP II
MOSFET N-CH 40V 85A TO220AB
DIODE GPP FAST 10A R-6
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 4Mb (256K x 16) |
| Memory Interface: | Parallel |
| Clock Frequency: | - |
| Write Cycle Time - Word, Page: | 10ns |
| Access Time: | 10 ns |
| Voltage - Supply: | 4.5V ~ 5.5V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
70V28L20PFGIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
|
CY7C109V33-20VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
|
S29GL01GS11FAIV13Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
|
IS61QDPB42M36A-500B4LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 165LFBGA |
|
|
CY7C2268XV18-600BZXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
|
BU9890GUL-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C VCSP50L1 |
|
|
IS43DR16160B-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
|
|
71V3576S150PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
|
MX25R8035FM2IL0Macronix |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
|
IS43R16160F-5TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
|
CY62168G30-45BVXICypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
|
|
70T3319S200BCRenesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
|
S25FL512SDSBHV210Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |