IC SRAM 4MBIT PARALLEL 44TSOP II
Type | Description |
---|---|
Series: | MoBL® |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 4Mb (256K x 16) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 45ns |
Access Time: | 45 ns |
Voltage - Supply: | 2.2V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
Supplier Device Package: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S25FL064LABNFV013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
7027L20PFGI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
MT25QL128ABA8ESF-0AAT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 16SO |
|
34AA02T-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8TDFN |
|
SST25WF020AT-40I/SNRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 40MHZ 8SOIC |
|
7142LA35PDGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48DIP |
|
71V546S100PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
TH58BYG2S3HBAI4Toshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 4GBIT 63TFBGA |
|
CY7C1041G30-10BVXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
CY62147GN30-45ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
25AA640X-I/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 1MHZ 8TSSOP |
|
R1EX25016ASA00A#S0Rochester Electronics |
IC EEPROM 16KBIT SPI 5MHZ 8SOP |
|
S70FL01GSAGBHMC10Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 24BGA |