







MEMS OSC XO 10.0000MHZ H/LV-CMOS
.050 X .050 C.L. FEMALE IDC ASSE
IC DRAM 512MBIT PARALLEL 54TFBGA
INSULATION DISPLACEMENT TERMINAL
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tape & Reel (TR) |
| Part Status: | Not For New Designs |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM |
| Memory Size: | 512Mb (32M x 16) |
| Memory Interface: | Parallel |
| Clock Frequency: | 166 MHz |
| Write Cycle Time - Word, Page: | - |
| Access Time: | 5.4 ns |
| Voltage - Supply: | 3V ~ 3.6V |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 54-TFBGA |
| Supplier Device Package: | 54-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
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