IC DRAM 512MBIT PARALLEL 60TFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 200 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 700 ps |
Voltage - Supply: | 2.3V ~ 2.7V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS46TR16640ED-15HBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
CDP1823EXRochester Electronics |
128 X 8 STANDARD SRAM |
|
IS42VM16400M-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
S25FS128SDSBHB200Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
FM24C09UFNRochester Electronics |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |
|
CY7C166-15VCRochester Electronics |
STANDARD SRAM, 16KX4, 15NS, CMOS |
|
AT24CS32-STUM-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C SOT23-5 |
|
IS42S83200G-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
25LC1024-I/PRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ 8DIP |
|
CY62256VNLL-70ZXARochester Electronics |
IC SRAM 256KBIT PAR 28TSOP I |
|
IS64LF12832EC-7.5TQLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 100LQFP |
|
CY62256LL-70ZRIRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
CY7C2665KV18-550BZXICypress Semiconductor |
IC SRAM 144MBIT PARALLEL 165FBGA |