IC SRAM 18MBIT PARALLEL 100LQFP
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, SDR |
Memory Size: | 18Mb (512K x 36) |
Memory Interface: | Parallel |
Clock Frequency: | 200 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 3 ns |
Voltage - Supply: | 2.375V ~ 2.625V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-LQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
BR24A04F-WLBH2ROHM Semiconductor |
IC EEPROM 4KBIT I2C 400KHZ 8SOP |
|
47L04-I/SNRoving Networks / Microchip Technology |
IC EERAM 4KBIT I2C 1MHZ 8SOIC |
|
71V3556SA100BGG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS61C1024AL-12JLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT25XE081D-MAHN-TAdesto Technologies |
IC FLASH 8MBIT SPI/QUAD 8USON |
|
CY7C1562XV18-450BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1061GE30-10ZSXICypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |
|
W632GU6NB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
IS43LR32160C-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 90TFBGA |
|
CY7C1019CV33-12BVIRochester Electronics |
STANDARD SRAM, 128KX8 |
|
FEMC004GTTG7-T24-16Flexxon |
IC FLASH 32GBIT EMMC 100FBGA |
|
IS42S16320F-7TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
|
NV24C08DTVLT3GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT I2C 1MHZ 8TSSOP |