IC DRAM 512MBIT PARALLEL 90TFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile |
Memory Size: | 512Mb (16M x 32) |
Memory Interface: | Parallel |
Clock Frequency: | 133 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 6 ns |
Voltage - Supply: | 2.3V ~ 3V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 90-TFBGA |
Supplier Device Package: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
25LC128T-E/STRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
W25Q80EWSNIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8SOIC |
|
M93C86-RDW3TP/KSTMicroelectronics |
IC EEPROM 16KBIT SPI 2MHZ 8TSSOP |
|
IS61WV102416EDBLL-10B2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TFBGA |
|
CY7C1019CV33-15VCRochester Electronics |
STANDARD SRAM, 128KX8 |
|
MT29F4G08ABAFAWP-AAT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
S25HS512TDPBHI010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
70V3319S166BFRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
CY62146GN-45ZSXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
W9412G6KH-5IWinbond Electronics Corporation |
IC DRAM 128MBIT PAR 66TSOP II |
|
CY7C1412KV18-250BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
IS61WV6416DBLL-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
HM1-65262-9Rochester Electronics |
16K X 1 ASYNCHRONOUS CMOS SRAM |