IC SRAM 256KBIT PARALLEL 28SOIC
Type | Description |
---|---|
Series: | MoBL® |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 256Kb (32K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 55ns |
Access Time: | 55 ns |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 28-SOIC (0.295", 7.50mm Width) |
Supplier Device Package: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
DS28E10R+TMaxim Integrated |
IC EPROM 224B 1-WIRE SOT23-3 |
|
S29GL01GP11FFIR20Flip Electronics |
IC FLASH 1GBIT PARALLEL 64BGA |
|
MT29F16G08ABCCBH1-10ITZ:CMicron Technology |
IC FLASH 16GBIT PARALLEL 100VBGA |
|
CYM9238PZ-25CRochester Electronics |
SRAM CHIP |
|
IS61LV256AL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 256KBIT PAR 28TSOP I |
|
AM27S21A/B2ARochester Electronics |
AM27S21 - OTP ROM, 256X4, 40NS |
|
S-93A66BD0A-J8T2U3ABLIC U.S.A. Inc. |
IC EEPROM 4KBIT SPI 2MHZ 8SOPJ |
|
W631GG6MB12IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
25LC080C-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8MSOP |
|
IS61WV102416EDBLL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PARALLEL 48TSOP I |
|
MX25R8035FM2IH1Macronix |
IC FLASH 8MBIT SPI/QUAD I/O 8SOP |
|
IS43TR16128D-107MBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
71V67602S166BGGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |