IC DRAM 2GBIT PARALLEL 84FBGA
Type | Description |
---|---|
Series: | Automotive, AEC-Q100 |
Package: | Tray |
Part Status: | Last Time Buy |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 2Gb (128M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400 ps |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | -40°C ~ 105°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 84-TFBGA |
Supplier Device Package: | 84-FBGA (9x12.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
71V3557S80PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CY7C1472BV33-200AXCRochester Electronics |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
MX25L6406EM2I-12GMacronix |
IC FLASH 64MBIT SPI 86MHZ 8SOP |
|
CY7C1460AV25-250AXCRochester Electronics |
IC SRAM 36MBIT PARALLEL 100TQFP |
|
NV93C76BMUW3VTBGSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT SPI 2MHZ 8UDFN |
|
SST39VF040-70-4I-WHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
IS42VM16320E-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
CY7C263-20WCRochester Electronics |
UVPROM, 8KX8, 20NS, CMOS |
|
25LC320A-H/SNRoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 5MHZ 8SOIC |
|
MT29F2G01ABAGDWB-IT:G TRMicron Technology |
IC FLASH 2GBIT SPI 8UPDFN |
|
24AA08T/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
W631GU6MB-11Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96VFBGA |
|
IS61NLP25636B-200TQLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |