IC EEPROM 256KBIT PAR 28CDIP
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 256Kb (32K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 10ms |
Access Time: | 200 ns |
Voltage - Supply: | 4.5V ~ 5.5V |
Operating Temperature: | -55°C ~ 125°C (TC) |
Mounting Type: | Through Hole |
Package / Case: | 28-CDIP (0.600", 15.24mm) |
Supplier Device Package: | 28-CDIP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SST25WF020AT-40I/MFRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 40MHZ 8WDFN |
|
BR24T32FV-WE2ROHM Semiconductor |
IC EEPROM 32KBIT I2C 8SSOPB |
|
IS42SM32400H-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
24LC01BT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
S29GL01GP11FFSS80Flip Electronics |
IC FLASH 1GBIT PARALLEL 64BGA |
|
S29GL256N90FFAR22Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
AS4C16M16D1-5BCNTRAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
R1LV0208BSA-5SI#B1Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 32STSOP |
|
25LC080A-I/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 10MHZ 8SOIC |
|
W987D6HBGX6IWinbond Electronics Corporation |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
M95160-RMN6TPSTMicroelectronics |
IC EEPROM 16KBIT SPI 10MHZ 8SO |
|
GS82582DT19GE-450IGSI Technology |
IC SRAM 288MBIT PAR 165FPBGA |
|
IS43R16800E-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 66TSOP II |