IC DRAM 128MBIT PARALLEL 54TFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 128Mb (8M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 166 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 5.4 ns |
Voltage - Supply: | 3V ~ 3.6V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 54-TFBGA |
Supplier Device Package: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
NM93C56ANRochester Electronics |
EEPROM, 128X16, SERIAL PDIP8 |
|
FM28V102A-TGTRCypress Semiconductor |
IC FRAM 1MBIT PARALLEL 44TSOP II |
|
CY7C128A-15VCRochester Electronics |
IC SRAM 16KBIT PARALLEL 24SOJ |
|
S25FL164K0XMFB000Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
HM1-6516-9Rochester Electronics |
STANDARD SRAM, 2KX8, 200NS, CMOS |
|
MT25QL512ABB8ESF-0AAT TRMicron Technology |
IC FLASH 512MBIT SPI 133MHZ 16SO |
|
IS61WV25616BLL-10BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
CY7C1470BV33-200AXCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
M95256-WMN6TPSTMicroelectronics |
IC EEPROM 256KBIT SPI 20MHZ 8SO |
|
S26KL512SDABHB030Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 24FBGA |
|
CAT24C512WI-GRochester Electronics |
IC EEPROM 512KBIT I2C 1MHZ 8SOIC |
|
IS43LR16320B-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
24LC32AF-E/STRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8TSSOP |