IC SRAM 256KBIT PARALLEL 28SOJ
Type | Description |
---|---|
Series: | - |
Package: | Tube |
Part Status: | Obsolete |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Asynchronous |
Memory Size: | 256Kb (32K x 8) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 15 ns |
Voltage - Supply: | 3V ~ 3.6V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 28-BSOJ (0.300", 7.62mm Width) |
Supplier Device Package: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MT41K512M8DA-107 AAT:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
M24C32-FMC6TGSTMicroelectronics |
IC EEPROM 32KBIT I2C 8UFDFPN |
|
MTFC16GAKAEEF-AIT TRMicron Technology |
IC FLASH 128GBIT MMC 169TFBGA |
|
S25FL256SAGMFIG00Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
MX25L1606EZUI-12GMacronix |
IC FLASH 16MBIT SPI 86MHZ 8USON |
|
M24128S-FCU6T/TSTMicroelectronics |
IC EEPROM 128KBIT I2C 4WLCSP |
|
CY14B101I-SFXITCypress Semiconductor |
IC NVSRAM 1MBIT I2C 16SOIC |
|
W632GU6NB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
70V3399S133BFIRenesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
CAT25128HU4I-GT3Rochester Electronics |
IC EEPROM 128KBIT SPI 8UDFN |
|
CY7C1347F-100ACRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
S29GL256S90FAI023Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
71V2546S133PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |