EEPROM, 256X16, SERIAL, CMOS
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 4Kb (256 x 16) |
Memory Interface: | SPI |
Clock Frequency: | 250 kHz |
Write Cycle Time - Word, Page: | 15ms |
Access Time: | - |
Voltage - Supply: | 2.7V ~ 5.5V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
70T3509MS133BPIRenesas Electronics America |
IC SRAM 36MBIT PARALLEL 256CABGA |
|
71V3577S80BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS62WV10248EBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48VFBGA |
|
IS49RL36160-093BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 168FCBGA |
|
CY7C136A55JXIRochester Electronics |
DUAL-PORT SRAM, 2KX8, 55NS |
|
AS4C64M4SA-6TINAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT41K256M16TW-107 AIT:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
71T75602S133BGIRochester Electronics |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
71V321L35JGIRochester Electronics |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
BR24G08FJ-3AGTE2ROHM Semiconductor |
IC EEPROM 8KBIT I2C 1MHZ 8SOPJ |
|
S25FL256SAGBHI300Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 24BGA |
|
71V424L15PHGI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
CY62126DV30L-55BVXERochester Electronics |
IC SRAM 1MBIT PARALLEL 48VFBGA |