CACHE SRAM, 512KX18, 3.5NS
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, SDR |
Memory Size: | 9Mb (512K x 18) |
Memory Interface: | Parallel |
Clock Frequency: | 166 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 3.5 ns |
Voltage - Supply: | 3.135V ~ 3.6V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
S29PL127J80TFI090Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
GD25WD05CTIGRGigaDevice |
IC FLASH 512KBIT SPI/QUAD 8SOP |
|
CY7C2245KV18-450BZXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
GD25Q40CSIGRGigaDevice |
IC FLASH 4MBIT SPI/QUAD I/O 8SOP |
|
S29GL064N90BFI043Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
CY7C1059DV33-10ZSXICypress Semiconductor |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
MT47H32M16NF-25E AUT:H TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
BR24C32-MN6TPROHM Semiconductor |
IC EEPROM 32KBIT I2C 400KHZ 8SO |
|
DS2502SRochester Electronics |
IC EPROM 1KBIT 1-WIRE 8SOIC |
|
IS42S32800J-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
93C66A-E/MSRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8MSOP |
|
BR24A64F-WLBH2ROHM Semiconductor |
IC EEPROM 64KBIT I2C 400KHZ 8SOP |
|
W25M02GVTBIT TRWinbond Electronics Corporation |
IC FLSH 2GBIT SPI 104MHZ 24TFBGA |