







MEMS OSC XO 18.4320MHZ H/LV-CMOS
MEMS OSC XO 74.1760MHZ H/LV-CMOS
CONN RCPT 24POS 0.039 GOLD SMD
STANDARD SRAM, 256KX16, 20NS PDS
| Type | Description |
|---|---|
| Series: | - |
| Package: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | SRAM |
| Technology: | SRAM - Asynchronous |
| Memory Size: | 4Mb (256K x 16) |
| Memory Interface: | Parallel |
| Clock Frequency: | - |
| Write Cycle Time - Word, Page: | 20ns |
| Access Time: | 20 ns |
| Voltage - Supply: | 3V ~ 3.6V |
| Operating Temperature: | -40°C ~ 125°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
|
|
CY7C2570KV18-400BZCRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
|
RMLV0816BGSD-4S2#AA1Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 52TSOP II |
|
|
IS61NLF12836EC-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100LQFP |
|
|
S70FL01GSAGBHMC13Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 24BGA |
|
|
AT28HC256E-90TURoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
|
IS42S32160F-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 86TSOP II |
|
|
CY7C13201KV18-333BZXCRochester Electronics |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
|
MT41K256M16TW-107 AAT:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
AT45DQ161-SHFHD-TAdesto Technologies |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
|
S25FL256LAGNFI010Cypress Semiconductor |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
|
IS43R32160D-5BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 144LFBGA |
|
|
M29W320DB7AN6FFlip Electronics |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
|
CY7C1371KV33-133AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |