IC DRAM 256MBIT PARALLEL 90TFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM |
Memory Size: | 256Mb (32M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 143 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 5.4 ns |
Voltage - Supply: | 3V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 90-TFBGA |
Supplier Device Package: | 90-TFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS42VM16800H-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
AT25SF041B-SSHB-TAdesto Technologies |
IC FLASH 4MBIT SPI/QUAD 8SOIC |
|
SST25VF020B-80-4C-SAERoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 80MHZ 8SOIC |
|
S25FL512SAGBHBA10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
|
W29GL512SH9B TRWinbond Electronics Corporation |
IC FLSH 512MBIT PARALLEL 64LFBGA |
|
CY7C235A-25PCRochester Electronics |
OTP ROM, 1KX8, 12NS |
|
70V658S12BF8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 208CABGA |
|
IS61WV51216EEBLL-10T2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48TSOP I |
|
CY7C1041GN-10VXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
SST39VF802C-70-4I-MAQE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 48WFBGA |
|
70T3319S133BFIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
BR25A512FVT-3MGE2ROHM Semiconductor |
IC EEPROM 512KBIT SPI 8TSSOP |
|
CY14ME064Q2A-SXQTCypress Semiconductor |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |