IC FLASH 1GBIT PARALLEL 56TSOP
Type | Description |
---|---|
Series: | GL-S |
Package: | Tray |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Gb (64M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 60ns |
Access Time: | 110 ns |
Voltage - Supply: | 2.7V ~ 3.6V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 56-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FM24C17UFLZEM8Rochester Electronics |
IC EEPROM 16KBIT I2C 8SOIC |
|
AT24C08D-PUMRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 1MHZ 8DIP |
|
S25FL128SAGBHIZ03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
SST26VF032BT-104I/TDRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 24TBGA |
|
R1LP0108ESF-7SR#B0Rochester Electronics |
STANDARD SRAM, 128KX8, 70NS |
|
FM93C86ALZEM8Rochester Electronics |
EEPROM, 1KX16, SERIAL, CMOS |
|
93AA56CT-I/MCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8DFN |
|
IS43DR16160B-37CBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 84TWBGA |
|
CY14V104LA-BA45XIESRochester Electronics |
NON-VOLATILE SRAM |
|
SST26WF016BAT-104I/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
CY7C1568KV18-400BZXIRochester Electronics |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C1006B-15VCTRochester Electronics |
STANDARD SRAM, 256KX4, 15NS |
|
IS29GL256-70DLETISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 256MBIT PAR 64LFBGA |