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DS1230AB-200IND

DS1230AB-200IND

IC NVSRAM 256KBIT PAR 28EDIP

DS1230AB-200IND

DS1230AB-200IND

Image is for reference, please contact us to get the real picture

Part No :

DS1230AB-200IND

Manufacturer
Rochester Electronics
Description
IC NVSRAM 256KBIT PAR 28EDIP
Catalog
Memory
Availability
10118 pieces
Shipped from
HK warehouse
Expected Shipping Date
Feb 02 - Feb 06 2025
PDF
DS1230AB-200IND PDF
Type Description
Series:-
Package:Tube
Part Status:Obsolete
Memory Type:Non-Volatile
Memory Format:NVSRAM
Technology:NVSRAM (Non-Volatile SRAM)
Memory Size:256Kb (32K x 8)
Memory Interface:Parallel
Clock Frequency:-
Write Cycle Time - Word, Page:200ns
Access Time:200 ns
Voltage - Supply:4.75V ~ 5.25V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Through Hole
Package / Case:28-DIP Module (0.600", 15.24mm)
Supplier Device Package:28-EDIP
DS1230AB-200IND is available at GangBo-ic.com, Please review product page below for detailed information, including DS1230AB-200IND price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for DS1230AB-200IND to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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Phone: 00852-52612101

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