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CY7C1426JV18-300BZCES

CY7C1426JV18-300BZCES

SRAM 1.8V 36M-BIT 4M X 9-BIT

IS25LQ512B-JKLE-TR

IS25LQ512B-JKLE-TR

IC FLASH 512KBIT SPI/QUAD 8WSON

CY7C1426JV18-300BZCES

CY7C1426JV18-300BZCES

Image is for reference, please contact us to get the real picture

Part No :

CY7C1426JV18-300BZCES

Manufacturer
Rochester Electronics
Description
SRAM 1.8V 36M-BIT 4M X 9-BIT
Catalog
Memory
Availability
951295 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 16 - Nov 20 2024
Type Description
Series:-
Package:Bulk
Part Status:Active
Memory Type:Volatile
Memory Format:SRAM
Technology:SRAM - Synchronous, QDR II
Memory Size:36Mb (4M x 9)
Memory Interface:Parallel
Clock Frequency:300 MHz
Write Cycle Time - Word, Page:-
Access Time:-
Voltage - Supply:1.7V ~ 1.9V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:165-LBGA
Supplier Device Package:165-FBGA (15x17)
CY7C1426JV18-300BZCES is available at GangBo-ic.com, Please review product page below for detailed information, including CY7C1426JV18-300BZCES price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for CY7C1426JV18-300BZCES to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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Phone: 00852-52612101

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