IC SRAM 1.125MBIT PAR 256CABGA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Dual Port, Asynchronous |
Memory Size: | 1.125Mb (32K x 36) |
Memory Interface: | Parallel |
Clock Frequency: | - |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 15 ns |
Voltage - Supply: | 3.15V ~ 3.45V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 256-LBGA |
Supplier Device Package: | 256-CABGA (17x17) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS61LF204836B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 72MBIT PARALLEL 100LQFP |
|
S-24CS01AFT-TB-GABLIC U.S.A. Inc. |
IC EEPROM 1KBIT I2C 8TSSOP |
|
NM24C04ENRochester Electronics |
IC EEPROM 4KBIT I2C 100KHZ 8DIP |
|
70V7319S166BC8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 256CABGA |
|
S-93C46BD0I-K8T3UABLIC U.S.A. Inc. |
IC EEPROM 1KBIT SPI 2MHZ 8TMSOP |
|
IS61VPS102418B-200TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100LQFP |
|
70V639S12BFGIRenesas Electronics America |
IC SRAM 2.25MBIT PAR 208FPBGA |
|
IS43R16320F-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
S25FL512SDPMFVG10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 16SOIC |
|
GS81302QT37GE-300IGSI Technology |
IC SRAM 144MBIT PAR 165FPBGA |
|
MT28EW01GABA1HPC-0AATMicron Technology |
IC FLASH 1GBIT PARALLEL 64LBGA |
|
S29AS016J70BFI043Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
71V67803S150PFGRochester Electronics |
IC SRAM 9MBIT PARALLEL 100TQFP |