DDR SRAM, 2MX18, 0.45NS PBGA165
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, DDR II |
Memory Size: | 36Mb (2M x 18) |
Memory Interface: | Parallel |
Clock Frequency: | 250 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
IS61WV25632BLL-10BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 90TFBGA |
|
S29GL128P90FFIR23Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IS43R86400F-5BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 60TFBGA |
|
70T3339S133BC8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
24VL025/STRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
S29GL032N90FFI010Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
AT24C02C-XHM-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
CY14B104L-ZS25XCRochester Electronics |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
11LC040-I/PRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SINGLE WIRE 8DIP |
|
CAT25010SRochester Electronics |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
GD25D80CKIGRGigaDevice |
IC FLASH 8MBIT SPI/DUAL 8USON |
|
FM93C56ALM8Rochester Electronics |
EEPROM, 128X16, SERIAL, CMOS |
|
BR25S640FV-WE2ROHM Semiconductor |
IC EEPROM 64KBIT SPI 8SSOPB |