DDR SRAM, 512KX36, 0.45NS PBGA16
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, DDR II+ |
Memory Size: | 18Mb (512K x 36) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | - |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 165-LBGA |
Supplier Device Package: | 165-FBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
MT29F64G08AECDBJ4-6ITR:DMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |
|
CY7C1021CV33-12ZSXETRochester Electronics |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
93C46B-E/STRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
W971GG6SB-25Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 84WBGA |
|
25LC160CT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 10MHZ 8MSOP |
|
71V2556S166PFGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS46R16160D-5BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
IS25LP032D-JLLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
IS42S16160J-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AS7C31025B-15TJCNAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
R1LV0108ESA-7SR#S0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32STSOP |
|
S25FS128SAGMFI101Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
CY7C1051H30-10BV1XETCypress Semiconductor |
IC SRAM 8MBIT PARALLEL 48VFBGA |