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IS61QDP2B21M18A-333M3L

IS61QDP2B21M18A-333M3L

IC SRAM 18MBIT PARALLEL 165LFBGA

20ESK6

20ESK6

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IS61QDP2B21M18A-333M3L

IS61QDP2B21M18A-333M3L

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Part No :

IS61QDP2B21M18A-333M3L

Manufacturer
ISSI (Integrated Silicon Solution, Inc.)
Description
IC SRAM 18MBIT PARALLEL 165LFBGA
Catalog
Memory
Availability
567856 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 27 - Dec 01 2024
PDF
IS61QDP2B21M18A-333M3L PDF
Type Description
Series:-
Package:Tray
Part Status:Active
Memory Type:Volatile
Memory Format:SRAM
Technology:SRAM - Synchronous, QUADP
Memory Size:18Mb (1M x 18)
Memory Interface:Parallel
Clock Frequency:333 MHz
Write Cycle Time - Word, Page:-
Access Time:8.4 ns
Voltage - Supply:1.71V ~ 1.89V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:165-LBGA
Supplier Device Package:165-LFBGA (15x17)
IS61QDP2B21M18A-333M3L is available at GangBo-ic.com, Please review product page below for detailed information, including IS61QDP2B21M18A-333M3L price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for IS61QDP2B21M18A-333M3L to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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