EEPROM, 256X16, SERIAL, CMOS
Type | Description |
---|---|
Series: | - |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 4Kb (256 x 16) |
Memory Interface: | SPI |
Clock Frequency: | 250 kHz |
Write Cycle Time - Word, Page: | 15ms |
Access Time: | - |
Voltage - Supply: | 2.7V ~ 5.5V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
FT24C02A-USR-BFremont Micro Devices |
IC EEPROM 2KBIT I2C 1MHZ 8SOP |
|
CYATB108LD-ZS45XIRochester Electronics |
IC NVSRAM 8MBIT PAR 44TSOP II |
|
CY7C199CN-12VXIRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
IS42VM32100D-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 32MBIT PARALLEL 90TFBGA |
|
MT25QL01GBBB8ESF-0SITMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SO |
|
AT27LV040A-90JU-TRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32PLCC |
|
GT28F320C3BA110 |
IC FLASH 32MBIT PAR 48UBGA CSP |
|
71024S12TYGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS42VM16800H-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
71V67903S80PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
NDB16PFC-5EETInsignis Technology Corporation |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
AS4C2M32SA-6TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
|
MX25L12845GMI-10GMacronix |
IC FLSH 128MBIT SPI 120MHZ 16SOP |