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SIT8208AI-22-28S-25.000625T

SIT8208AI-22-28S-25.000625T

MEMS OSC XO 25.000625MHZ LVCMOS

691401700004B

691401700004B

5.00 MM TERMINAL BLOCK, VERTICAL

70T651S12BF

70T651S12BF

IC SRAM 9MBIT PARALLEL 208CABGA

IDSS-10-S-10.00-G

IDSS-10-S-10.00-G

INSULATION DISPLACEMENT SOCKET C

70T651S12BF

70T651S12BF

Image is for reference, please contact us to get the real picture

Part No :

70T651S12BF

Manufacturer
Renesas Electronics America
Description
IC SRAM 9MBIT PARALLEL 208CABGA
Catalog
Memory
Availability
607560 pieces
Shipped from
HK warehouse
Expected Shipping Date
Oct 27 - Oct 31 2025
PDF
70T651S12BF PDF
Type Description
Series:-
Package:Tray
Part Status:Active
Memory Type:Volatile
Memory Format:SRAM
Technology:SRAM - Dual Port, Asynchronous
Memory Size:9Mb (256K x 36)
Memory Interface:Parallel
Clock Frequency:-
Write Cycle Time - Word, Page:12ns
Access Time:12 ns
Voltage - Supply:2.4V ~ 2.6V
Operating Temperature:0°C ~ 70°C (TA)
Mounting Type:Surface Mount
Package / Case:208-LFBGA
Supplier Device Package:208-CABGA (15x15)
70T651S12BF is available at GangBo-ic.com, Please review product page below for detailed information, including 70T651S12BF price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for 70T651S12BF to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

Office Hours : Mon-Fri, 9:00-18:30(GMT+8)

[email protected]

Phone: 00852-52612101

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