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TC58NYG1S3HBAI6

TC58NYG1S3HBAI6

IC FLASH 2GBIT PARALLEL 67VFBGA

TC58NYG1S3HBAI6

TC58NYG1S3HBAI6

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Part No :

TC58NYG1S3HBAI6

Manufacturer
Toshiba Memory America, Inc. (Kioxia America, Inc.)
Description
IC FLASH 2GBIT PARALLEL 67VFBGA
Catalog
Memory
Availability
10457 pieces
Shipped from
HK warehouse
Expected Shipping Date
Nov 06 - Nov 10 2024
PDF
TC58NYG1S3HBAI6 PDF
Type Description
Series:-
Package:Tray
Part Status:Active
Memory Type:Non-Volatile
Memory Format:FLASH
Technology:FLASH - NAND (SLC)
Memory Size:2Gb (256M x 8)
Memory Interface:Parallel
Clock Frequency:-
Write Cycle Time - Word, Page:25ns
Access Time:25 ns
Voltage - Supply:1.7V ~ 1.95V
Operating Temperature:-40°C ~ 85°C (TA)
Mounting Type:Surface Mount
Package / Case:67-VFBGA
Supplier Device Package:67-VFBGA (6.5x8)
TC58NYG1S3HBAI6 is available at GangBo-ic.com, Please review product page below for detailed information, including TC58NYG1S3HBAI6 price, datasheets, in-stock availability, technical difficulties. Quickly Enter the access of compare list to find replaceable electronic parts. Want to gain comprehensive data for TC58NYG1S3HBAI6 to optimize the supply chain (include cross references, lifecycle, parametric, counterfeit risk, obsolescence management forecasts), please contact to our Tech-supports team.

GANG BO INDUSTRIAL CO., LIMITED [Hongkong]

UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK

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