ZBT SRAM, 512KX18, 7.5NS
Type | Description |
---|---|
Series: | NoBL™ |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | SRAM |
Technology: | SRAM - Synchronous, SDR |
Memory Size: | 9Mb (512K x 18) |
Memory Interface: | Parallel |
Clock Frequency: | 100 MHz |
Write Cycle Time - Word, Page: | - |
Access Time: | 7.5 ns |
Voltage - Supply: | 3.135V ~ 3.6V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 100-LQFP |
Supplier Device Package: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY27C010-150JCRochester Electronics |
OTP ROM, 128KX8, 150NS PQCC32 |
|
AT25010B-XHL-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8TSSOP |
|
BR24S16FVT-WE2ROHM Semiconductor |
IC EEPROM 16K I2C 400KHZ 8TSSOP |
|
IS62WV6416BLL-55BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
SST39VF3202-70-4C-EKERoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IS64LPS204818B-166TQLA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
MT57W1MH18CF-4Rochester Electronics |
DDR SRAM, 1MX18, 0.45NS PBGA165 |
|
24LC64X-E/STRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
SST39VF3202-70-4I-B3KE-TRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
CAT25020LI-GRochester Electronics |
IC EEPROM 2KBIT SPI 20MHZ 8DIP |
|
S29GL01GS11TFB023Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
IS46R86400D-6TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 66TSOP II |
|
24FC01T-I/MUYRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8UDFN |