IC DRAM 512MBIT PARALLEL 60FBGA
Type | Description |
---|---|
Series: | - |
Package: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 512Mb (64M x 8) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400 ps |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 60-TFBGA |
Supplier Device Package: | 60-FBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
CY14V116G7-BZ30XICypress Semiconductor |
NO WARRANTY |
|
IS46R16160F-6BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
CY14B101P-SFXITRochester Electronics |
IC NVSRAM 1MBIT SPI 40MHZ 16SOIC |
|
71V124SA12PHGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
IS61LF51236B-7.5B3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
71V67603S133BG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
DS28EC20+Maxim Integrated |
IC EEPROM 20KBIT 1-WIRE TO92-3 |
|
CYD18S36V18-200BBAXIRochester Electronics |
IC SRAM 18MBIT PARALLEL 256FBGA |
|
R1LP5256ESP-5SI#B1Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |
|
S25FL128SDPMFIG13Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
QS7026A-55JRochester Electronics |
IC SRAM 256KBIT 18MHZ |
|
93AA46CX-I/SNRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8SOIC |
|
S25FL128SDSMFBG13Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 16SOIC |