IC DRAM 512MBIT PARALLEL 84FBGA
Type | Description |
---|---|
Series: | Automotive, AEC-Q100 |
Package: | Bulk |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - DDR2 |
Memory Size: | 512Mb (32M x 16) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | 400 ps |
Voltage - Supply: | 1.7V ~ 1.9V |
Operating Temperature: | -40°C ~ 95°C (TC) |
Mounting Type: | Surface Mount |
Package / Case: | 84-TFBGA |
Supplier Device Package: | 84-FBGA (8x12.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
SST49LF080A-33-4C-WHERoving Networks / Microchip Technology |
IC FLASH 8MBIT PARALLEL 32TSOP |
|
71V416S15BE8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
CY62146G30-45BVXITCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
CY7C1049CV33-12ZSXACypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
93LC46/PRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
71V2546S100BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1399BN-15VXATRochester Electronics |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
R1LV0108ESN-5SR#B0Rochester Electronics |
IC SRAM 1MBIT PARALLEL 32SOP |
|
IS42VM16320E-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54TFBGA |
|
M95512-WMN6PSTMicroelectronics |
IC EEPROM 512KBIT SPI 16MHZ 8SO |
|
MT41K128M8DA-107 IT:J TRMicron Technology |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
S29GL064S70DHI040Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT25QL01GBBB8ESF-0AAT TRMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SO |