IC DRAM 512MBIT PAR 134VFBGA
Type | Description |
---|---|
Series: | - |
Package: | Tray |
Part Status: | Active |
Memory Type: | Volatile |
Memory Format: | DRAM |
Technology: | SDRAM - Mobile LPDDR2 |
Memory Size: | 512Mb (16M x 32) |
Memory Interface: | Parallel |
Clock Frequency: | 400 MHz |
Write Cycle Time - Word, Page: | 15ns |
Access Time: | - |
Voltage - Supply: | 1.14V ~ 1.95V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 134-VFBGA |
Supplier Device Package: | 134-VFBGA (10x11.5) |
UNIT2, 22/F., RICHMOND COMM. BLDG., 109 ARGYLE STREET, MONGKOK, KOWLOON, HK
Office Hours : Mon-Fri, 9:00-18:30(GMT+8)
Phone: 00852-52612101
71024S12TYG8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY14ME064Q2A-SXQRochester Electronics |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
FM24C64B-GCypress Semiconductor |
IC FRAM 64KBIT I2C 1MHZ 8SOIC |
|
FT25C32A-USR-TFremont Micro Devices |
IC EEPROM 32KBIT SPI 20MHZ 8SOP |
|
CY7C1019CV33-12ZXCTRochester Electronics |
IC SRAM 1MBIT PARALLEL 32TSOP II |
|
IS61LPS204818B-200B3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165TFBGA |
|
CY7C1418KV18-250BZXCCypress Semiconductor |
NO WARRANTY |
|
SST26WF016B-104I/MFRoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
CY14B116N-Z45XITCypress Semiconductor |
IC NVSRAM 16MBIT PAR 48TSOP I |
|
11LC020-E/PRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SINGLE WIRE 8DIP |
|
71V424L12PHGIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
BR24G256F-3AGTE2ROHM Semiconductor |
IC EEPROM 256KBIT I2C 1MHZ 8SOP |
|
S29GL512T11DHB020Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |